Angular dependence of the tunneling anisotropic magnetoresistance in magnetic tunnel junctions

Matos-Abiague, A. and Gmitra, M. and Fabian, J. (2009) Angular dependence of the tunneling anisotropic magnetoresistance in magnetic tunnel junctions. PHYSICAL REVIEW B, 80 (4): 045312. ISSN 1098-0121,

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Abstract

Based on general symmetry considerations, we investigate how the dependence of the tunneling anisotropic magnetoresistance (TAMR) on the magnetization direction is determined by the specific form of the spin-orbit coupling field. By extending a phenomenological model, previously proposed for explaining the main trends of the TAMR in (001) ferromagnet/semiconductor/normal-metal magnetic tunnel junctions (MTJs) [J. Moser et al., Phys. Rev. Lett. 99, 056601 (2007)], we provide a unified qualitative description of the TAMR in MTJs with different growth directions. In particular, we predict the forms of angular dependences of the TAMR in (001), (110), and (111) MTJs with structure inversion asymmetries and/or bulk inversion asymmetries. The effects of in-plane uniaxial strain on the TAMR are also investigated.

Item Type: Article
Uncontrolled Keywords: ;
Subjects: 500 Science > 530 Physics
Divisions: Physics > Institute of Theroretical Physics > Chair Professor Richter > Group Jaroslav Fabian
Depositing User: Dr. Gernot Deinzer
Date Deposited: 14 Sep 2020 06:19
Last Modified: 14 Sep 2020 06:19
URI: https://pred.uni-regensburg.de/id/eprint/28792

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