Lechner, V. and Golub, L. E. and Olbrich, P. and Stachel, S. and Schuh, D. and Wegscheider, W. and Bel'kov, V. V. and Ganichev, S. D. (2009) Tuning of structure inversion asymmetry by the delta-doping position in (001)-grown GaAs quantum wells. APPLIED PHYSICS LETTERS, 94 (24): 242109. ISSN 0003-6951,
Full text not available from this repository. (Request a copy)Abstract
Both structure and bulk inversion asymmetry in modulation-doped (001)-grown GaAs quantum wells were investigated employing the magnetic field induced photogalvanic effect. We demonstrate that the structure inversion asymmetry (SIA) can be accurately tailored by the delta-doping layer position. Symmetrically doped structures exhibit a substantial SIA due to impurity segregation during the growth process. Tuning the SIA by the delta-doping position, we can grow samples with almost equal degrees of structure and bulk inversion asymmetry.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | ; aluminium compounds; gallium arsenide; III-V semiconductors; impurity distribution; photoconductivity; photovoltaic effects; segregation; semiconductor doping; semiconductor growth; semiconductor quantum wells; silicon |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 14 Sep 2020 07:04 |
| Last Modified: | 14 Sep 2020 07:04 |
| URI: | https://pred.uni-regensburg.de/id/eprint/28819 |
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