Electrical spin injection and detection in lateral all-semiconductor devices

Ciorga, M. and Einwanger, A. and Wurstbauer, U. and Schuh, D. and Wegscheider, W. and Weiss, D. (2009) Electrical spin injection and detection in lateral all-semiconductor devices. PHYSICAL REVIEW B, 79 (16): 165321. ISSN 1098-0121, 1550-235X

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Abstract

Both electrical injection and detection of spin-polarized electrons are demonstrated in a single wafer all-semiconductor GaAs-based lateral spintronic device, employing p(+)-(Ga,Mn)As/n(+)-GaAs ferromagnetic Esaki diodes as spin aligning contacts. Spin-dependent phenomena, such as spin precession and spin-valve effect, are observed in nonlocal signal and the measurements reveal the unusual origin of the latter in the investigated devices. The conversion of spin-polarized holes into spin-polarized electrons via Esaki tunneling leaves its mark in a bias dependence of the spin-injection efficiency, which at maximum reaches the value of 50%.

Item Type: Article
Uncontrolled Keywords: DIODE; HETEROSTRUCTURE; MAGNETIZATION; ACCUMULATION; SPINTRONICS; (GA,MN)AS; VALVE; GAAS; gallium arsenide; gallium compounds; magnetoelectronics; manganese compounds; spin polarised transport; spin valves; tunnel diodes
Subjects: 500 Science > 530 Physics
Divisions: Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Dieter Weiss
Depositing User: Dr. Gernot Deinzer
Date Deposited: 21 Sep 2020 05:00
Last Modified: 21 Sep 2020 05:00
URI: https://pred.uni-regensburg.de/id/eprint/29227

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