Olbrich, P. and Tarasenko, S. A. and Reitmaier, C. and Karch, J. and Plohmann, D. and Kvon, Z. D. and Ganichev, S. D. (2009) Observation of the orbital circular photogalvanic effect. PHYSICAL REVIEW B, 79 (12): 121302. ISSN 1098-0121,
Full text not available from this repository.Abstract
We report on the observation of the circular photogalvanic effect in Si-metal-oxide-semiconductor field-effect transistors with inversion channel excited by terahertz radiation. We demonstrate that in spite of the fact that the photocurrent is caused by transfer of the photon angular momentum to free carriers, it is not due to spin orientation but has a pure orbital origin. It results from the quantum interference of different pathways contributing to the free-carrier absorption of monochromatic radiation.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | BULK GAAS; elemental semiconductors; MOSFET; photoconductivity; photovoltaic effects; silicon |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 05 Oct 2020 07:20 |
| Last Modified: | 05 Oct 2020 07:20 |
| URI: | https://pred.uni-regensburg.de/id/eprint/29432 |
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