Buizert, Christo and Koppens, Frank H. L. and Pioro-Ladriere, Michel and Tranitz, Hans-Peter and Vink, Ivo T. and Tarucha, Seigo and Wegscheider, Werner and Vandersypen, Lieven M. K. (2008) InSitu Reduction of Charge Noise in GaAs/AlxGa1-xAs Schottky-Gated Devices. PHYSICAL REVIEW LETTERS, 101 (22): 226603. ISSN 0031-9007, 1079-7114
Full text not available from this repository. (Request a copy)Abstract
We show that an insulated electrostatic gate can be used to strongly suppress ubiquitous background charge noise in Schottky-gated GaAs/AlGaAs devices. Via a 2D self-consistent simulation of the conduction band profile we show that this observation can be explained by reduced leakage of electrons from the Schottky gates into the semiconductor through the Schottky barrier, consistent with the effect of "bias cooling." Upon noise reduction, the noise power spectrum generally changes from Lorentzian to 1/f type. By comparing wafers with different Al content, we exclude that DX centers play a dominant role in the charge noise.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | LOW-FREQUENCY NOISE; QUANTUM; TRAPS; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 19 Oct 2020 06:00 |
| Last Modified: | 19 Oct 2020 06:00 |
| URI: | https://pred.uni-regensburg.de/id/eprint/30034 |
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