Wittmann, B. and Golub, L. E. and Danilov, S. N. and Karch, J. and Reitmaier, C. and Kvon, Z. D. and Vinh, N. Q. and van der Meer, A. F. G. and Murdin, B. and Ganichev, Sergey D. (2008) Resonant circular photogalvanic effect in GaN/AlGaN heterojunctions. PHYSICAL REVIEW B, 78 (20): 205435. ISSN 2469-9950, 2469-9969
Full text not available from this repository. (Request a copy)Abstract
The resonant circular photogalvanic effect is observed in wurtzite (0001)-oriented GaN low-dimensional structures excited by infrared radiation. The current is induced by angular-momentum transfer of photons to the photoexcited electrons at resonant intersubband optical transitions in a GaN/AlGaN heterojunction. The signal reverses upon the reversal of the radiation helicity or, at fixed helicity, when the propagation direction of the photons is reversed. Making use of the tunability of the free-electron laser FELIX, we demonstrate that the current direction changes by sweeping the photon energy through the intersubband resonance condition, in agreement with theoretical considerations.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | FIELD-EFFECT TRANSISTORS; ALGAN/GAN; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 21 Oct 2020 08:25 |
| Last Modified: | 21 Oct 2020 08:25 |
| URI: | https://pred.uni-regensburg.de/id/eprint/30140 |
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