Hof, K. -D. and Rossler, C. and Manus, S. and Kotthaus, J. P. and Holleitner, A. W. and Schuh, D. and Wegscheider, W. (2008) Dynamic photoconductive gain effect in shallow-etched AlGaAs/GaAs quantum wires. PHYSICAL REVIEW B, 78 (11): 115325. ISSN 1098-0121,
Full text not available from this repository. (Request a copy)Abstract
We report on a dynamic photoconductive gain effect in quantum wires which are lithographically fabricated in an AlGaAs/GaAs quantum well via a shallow-etch technique. The effect allows resolving the one-dimensional subbands of the quantum wires as maxima in the photoresponse across the quantum wires. We interpret the results by optically induced holes in the valence band of the quantum well which shift the chemical potential of the quantum wire. The nonlinear current-voltage characteristics of the quantum wires also allow detecting the photoresponse effect of excess charge carriers in the conduction band of the quantum well. The dynamics of the photoconductive gain are limited by the recombination time of both electrons and holes.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | POINT CONTACTS; TRANSPORT; QUANTIZATION; CONDUCTANCE; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 26 Oct 2020 08:27 |
| Last Modified: | 26 Oct 2020 08:27 |
| URI: | https://pred.uni-regensburg.de/id/eprint/30432 |
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