Roessler, C. and Hof, K-D. and Manus, S. and Ludwig, S. and Kotthaus, J. P. and Simon, J. and Holleitner, A. W. and Schuh, D. and Wegscheider, W. (2008) Optically induced transport properties of freely suspended semiconductor submicron channels. APPLIED PHYSICS LETTERS, 93 (7): 071107. ISSN 0003-6951, 1077-3118
Full text not available from this repository. (Request a copy)Abstract
We report on optically induced transport phenomena in freely suspended channels containing a two-dimensional electron gas. The submicron devices are fabricated in AlGaAs/GaAs heterostructures by etching techniques. The photoresponse of the devices can be understood in terms of the combination of photogating and a photodoping effect. The hereby enhanced electronic conductance exhibits a time constant in the range of 1-10 ms. (c) 2008 American Institute of Physics.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | QUANTUM POINT-CONTACT; PHOTODETECTORS; NANOWIRES; MECHANISM; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 26 Oct 2020 09:30 |
| Last Modified: | 26 Oct 2020 09:30 |
| URI: | https://pred.uni-regensburg.de/id/eprint/30469 |
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