Stoeberl, U. and Wurstbauer, U. and Wegscheider, W. and Weiss, D. and Eroms, J. (2008) Morphology and flexibility of graphene and few-layer graphene on various substrates. APPLIED PHYSICS LETTERS, 93 (5): 051906. ISSN 0003-6951,
Full text not available from this repository. (Request a copy)Abstract
We report on detailed microscopy studies of graphene and few-layer graphene produced by mechanical exfoliation on various semiconducting substrates. We demonstrate the possibility to prepare and analyze graphene on (001)-GaAs, manganese p-doped (001)-GaAs, and InGaAs substrates. The morphology of graphene on these substrates was investigated by scanning electron and atomic force microscopies and compared to layers on SiO2. It was found that graphene sheets strongly follow the texture of the sustaining substrates independent on doping, polarity, or roughness. Furthermore resist residues exist on top of graphene after a lithographic step. The obtained results provide the opportunity to research the graphene-substrate interactions. (C) 2008 American Institute of Physics.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | GRAPHITE; GAS; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 26 Oct 2020 09:46 |
| Last Modified: | 26 Oct 2020 09:46 |
| URI: | https://pred.uni-regensburg.de/id/eprint/30488 |
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