Mel'nikov, M. Yu. and Khrapai, V. S. and Schuh, D. (2008) Formation of nanostructures in a heterojunction with a deeply located 2D electron gas via the method of high-voltage anodic-oxidation lithography using an atomic-force microscope. INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 51 (4). pp. 617-624. ISSN 0020-4412, 1608-3180
Full text not available from this repository.Abstract
A technique of high-voltage local anodic oxidation of the surfaces of Ga[Al]As-based heterostructures with the use of an atomic-force microscope is described. The application of a pulsed voltage and use of semicontact operating regime of the atomic-force microscope allowed obtainment of a locally depleted 2D electron gas (2DEG) at an unusually large depth of 80 nm from the surface. This circumstance makes it possible to create 2DEG-based ballistic nanostructures characterized by a high mobility of carriers. The technique of preparing an open quantum dot in the 2DEG with a mobility of mu approximate to 3 x 10(6) cm(2)/(V s) at 4.2 K is described and the results of low-temperature test measurements of its conductivity are presented.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | SCANNED PROBE OXIDATION; FABRICATION; SILICON; GAAS; TRANSISTOR; AFM; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Rupert Huber |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 28 Oct 2020 10:02 |
| Last Modified: | 28 Oct 2020 10:02 |
| URI: | https://pred.uni-regensburg.de/id/eprint/30665 |
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