Scholz, Dominik and Braun, Harald and Schwarz, Ulrich T. and Brueninghoff, Stefanie and Queren, Desiree and Lell, Alfred and Strauss, Uwe (2008) Measurement and simulation of filamentation in (Al,In)GaN laser diodes. OPTICS EXPRESS, 16 (10). pp. 6846-6859. ISSN 1094-4087,
Full text not available from this repository. (Request a copy)Abstract
(Al,In)GaN-based laser diodes with ridge widths broader than a few micrometer tend to show filamentation effects in the lateral direction. By time-resolved scanning near-field optical microscopy, we find different kinds of filaments depending on ridge width and lateral position. We investigate these effects systematically and compare them to the results of corresponding simulations, which are based on a simple rate equation model including the lateral dimension. By this comparison we find a consistent and reasonable set of material parameters that can describe the laser diode. Furthermore, we discuss several reasons for filamentation dynamics like ridge asymmetry or spatial hole-burning, as well as critical temperatures that induce filamentation. (C) 2008 Optical Society of America.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | QUANTUM-WELL LASERS; SEMICONDUCTOR-LASER; NEAR-FIELD; DYNAMICS; BEHAVIOR; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Ulrich Schwarz |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 03 Nov 2020 06:12 |
| Last Modified: | 03 Nov 2020 06:12 |
| URI: | https://pred.uni-regensburg.de/id/eprint/30903 |
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