Annealing-induced transition from a (311)A-oriented Ga(0.98)Mn(0.02)As alloy to a GaMnAs/MnAs hybrid structure studied by angle-dependent magnetotransport

Elm, M. T. and Klar, P. J. and Heimbrodt, W. and Wurstbauer, U. and Reinwald, M. and Wegscheider, W. (2008) Annealing-induced transition from a (311)A-oriented Ga(0.98)Mn(0.02)As alloy to a GaMnAs/MnAs hybrid structure studied by angle-dependent magnetotransport. JOURNAL OF APPLIED PHYSICS, 103 (9): 093710. ISSN 0021-8979,

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Abstract

The angle-dependent behavior of the magneto-resistance of a series of low-temperature molecular beam epitaxy grown Ga(0.98)Mn(0.02)As samples on (311)A-GaAs-substrates is studied. The samples are annealed at different temperatures in a range from 300 degrees C to 500 degrees C, which leads to a redistribution of the manganese in the sample and finally to the formation of MnAs clusters. As a consequence, the angle-dependence of the magneto-resistance changes with increasing annealing temperature and vanishes finally at an annealing temperature of 400 degrees C. The observed anisotropy of the magneto-resistance can be correlated with the magnetic anisotropy of the magnetization. The parameters describing this magnetic anisotropy and their changes due to annealing are extracted from the experimental magneto-resistance data by a fitting procedure. The magnetocrystalline anisotropy of the samples can be described by the sum of cubic and uniaxial contributions. The former are not affected by the annealing whereas the latter change considerably. (c) 2008 American Institute of Physics.

Item Type: Article
Uncontrolled Keywords: FERROMAGNETIC-RESONANCE; CURIE-TEMPERATURE; GA1-XMNXAS; (GA,MN)AS;
Subjects: 500 Science > 530 Physics
Divisions: Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
Depositing User: Dr. Gernot Deinzer
Date Deposited: 03 Nov 2020 09:54
Last Modified: 03 Nov 2020 09:54
URI: https://pred.uni-regensburg.de/id/eprint/30958

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