Rossler, C. and Bichler, M. and Schuh, D. and Wegscheider, W. and Ludwig, S. (2008) Laterally defined freely suspended quantum dots in GaAs/AlGaAs heterostructures. NANOTECHNOLOGY, 19 (16): 165201. ISSN 0957-4484, 1361-6528
Full text not available from this repository. (Request a copy)Abstract
Free-standing beams containing a two-dimensional electron system are shaped from a GaAs/ AlGaAs heterostructure. Quantum point contacts and ( double) quantum dots are laterally defined using metal top gates. We investigate the electronic properties of these nanostructures by transport spectroscopy. Tunable localized electron states in freely suspended nanostructures are a promising tool to investigate the electron-phonon interaction.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | ; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 04 Nov 2020 07:42 |
| Last Modified: | 04 Nov 2020 07:42 |
| URI: | https://pred.uni-regensburg.de/id/eprint/31037 |
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