Braun, H. and Solowan, H. -M. and Scholz, D. and Meyer, T. and Schwarz, U. T. and Brueninghoff, S. and Lell, A. and Strauss, U. (2008) Lateral and longitudinal mode pattern of broad ridge 405 nm (Al, In)GaN laser diodes. JOURNAL OF APPLIED PHYSICS, 103 (7): 073102. ISSN 0021-8979,
Full text not available from this repository. (Request a copy)Abstract
The lateral mode profile of pulsed broad ridge 405 nm (Al, In)GaN laser diodes grown on GaN and SiC substrates, respectively, is investigated by temporal and spectral resolved scanning near-field optical microscopy. During the first microsecond of the pulse, we observe changes both in the spatial mode profile and in the spectral regime caused by thermal and carrier induced modification of the waveguide refractive index, before stable filaments build up. In quasi-cw operation, a correlation between the lateral mode profile and the corresponding spatial resolved longitudinal mode pattern can be found. The results show that different filaments have different effective refractive indices and thus build up separate longitudinal mode combs. (C) 2008 American Institute of Physics.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | BEHAVIOR; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 05 Nov 2020 06:08 |
| Last Modified: | 05 Nov 2020 06:08 |
| URI: | https://pred.uni-regensburg.de/id/eprint/31109 |
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