Ferromagnetic GaMnAs grown on (110) faced GaAs

Wurstbauer, Ursula and Sperl, Matthias and Soda, Marcello and Neumaier, Daniel and Schuh, Dieter and Bayreuther, Guenther and Zweck, Josef and Wegscheider, Werner (2008) Ferromagnetic GaMnAs grown on (110) faced GaAs. APPLIED PHYSICS LETTERS, 92 (10): 102506. ISSN 0003-6951,

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Abstract

Thin Ga(0.94)Mn(0.06)As layers have been grown by low temperature molecular beam epitaxy on (110) GaAs substrates and on [110] and [-110] oriented GaAs cleaved edges. The Curie temperatures T(C) for the as-grown samples ranges from 46 to 80 K. After annealing at low temperatures T(C) increases up to 115 K. In addition, magnetic anisotropies determined by superconducting quantum interference device magnetometry and magnetotransport measurements are reported. (c) 2008 American Institute of Physics.

Item Type: Article
Uncontrolled Keywords: (GA,MN)AS;
Subjects: 500 Science > 530 Physics
Divisions: Physics > Institute of Experimental and Applied Physics
Physics > Institute of Experimental and Applied Physics > Chair Professor Back > Group Josef Zweck
Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
Depositing User: Dr. Gernot Deinzer
Date Deposited: 05 Nov 2020 11:26
Last Modified: 05 Nov 2020 11:26
URI: https://pred.uni-regensburg.de/id/eprint/31185

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