Ganichev, S. D. (2008) Spin-galvanic effect and spin orientation by current in non-magnetic semiconductors. INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 22 (1-2). pp. 1-26. ISSN 0217-9792,
Full text not available from this repository. (Request a copy)Abstract
The spin-galvanic effect and the inverse effect, which yeilds current induced spin polarization, in low dimensional semiconductor structures are reviewed. Both effect are caused by asymmetric spin relaxation in systems with lifted spin degeneracy due to k-linear terms in the Hamiltonian.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | QUANTUM-WELL STRUCTURES; ELECTRIC-CURRENT; OPTICAL ORIENTATION; HETEROSTRUCTURES; POLARIZATION; RELAXATION; BAND; PHOTOCURRENTS; ANISOTROPY; RESONANCE; spin-galvanic effect; spin polarization; spin splitting; terahertz |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 10 Nov 2020 08:34 |
| Last Modified: | 10 Nov 2020 08:34 |
| URI: | https://pred.uni-regensburg.de/id/eprint/31499 |
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