Tight-binding investigation of the metallic proximity effect of semiconductor-metal double-wall carbon nanotubes

Lu, Jie and Wang, Shidong (2007) Tight-binding investigation of the metallic proximity effect of semiconductor-metal double-wall carbon nanotubes. PHYSICAL REVIEW B, 76 (23): 233103. ISSN 2469-9950, 2469-9969

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Abstract

Based on a well-known tight-binding Hamiltonian formulation of carbon nanotubes, the local density of states of semiconductor-metal double-wall carbon nanotubes (DWCNTs) is evaluated numerically. The results verify that the semiconductor shells in contact with the nearby metallic shells become metallic, a direct evidence of a metallic proximity effect. This proximity effect can be used to explain the anomalous field effect characteristics observed in the field effect transistors made of the semiconductor-metal-type DWCNTs.

Item Type: Article
Uncontrolled Keywords: FIELD-EFFECT TRANSISTORS; SINGLE; LOCALIZATION; CONDUCTANCE;
Subjects: 500 Science > 530 Physics
Divisions: Physics > Institute of Theroretical Physics
Depositing User: Dr. Gernot Deinzer
Date Deposited: 25 Nov 2020 11:32
Last Modified: 25 Nov 2020 11:32
URI: https://pred.uni-regensburg.de/id/eprint/31882

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