Bimodal counting statistics in single-electron tunneling through a quantum dot

Fricke, C. and Hohls, F. and Wegscheider, W. and Haug, R. J. (2007) Bimodal counting statistics in single-electron tunneling through a quantum dot. PHYSICAL REVIEW B, 76 (15): 155307. ISSN 1098-0121,

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Abstract

We explore the full counting statistics of single-electron tunneling through a quantum dot using a quantum point contact as noninvasive high bandwidth charge detector. The distribution of counted tunneling events is measured as a function of gate and source-drain voltages for several consecutive electron numbers on the quantum dot. For certain configurations, we observe super-Poissonian statistics for bias voltages at which excited states become accessible. The associated counting distributions interestingly show a bimodal characteristic. Analyzing the time dependence of the number of electron counts, we relate this to a slow switching between different electron configurations on the quantum dot.

Item Type: Article
Uncontrolled Keywords: CONDUCTORS; OXIDATION;
Subjects: 500 Science > 530 Physics
Divisions: Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
Depositing User: Dr. Gernot Deinzer
Date Deposited: 01 Dec 2020 10:50
Last Modified: 01 Dec 2020 10:50
URI: https://pred.uni-regensburg.de/id/eprint/32180

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