Ciorga, M. and Schlapps, M. and Einwanger, A. and Geissler, S. and Sadowski, J. and Wegscheider, Werner and Weiss, Dieter (2007) TAMR effect in (Ga, Mn)As-based tunnel structures. NEW JOURNAL OF PHYSICS, 9: 351. ISSN 1367-2630,
Full text not available from this repository. (Request a copy)Abstract
We discuss the results of our experiments on tunnel devices based on ( Ga, Mn) As structures. Those include p(+)-( Ga, Mn)As/n(+)-GaAs Esaki diodes and laterally defined narrow nanoconstrictions in ( Ga, Mn) As epilayers. We found in those structures strong anisotropic magnetoresistance behaviour with features that could be attributed to the novel tunnelling anisotropic magnetoresistance effect. We argue however, that in case of nanoconstricted ( Ga, Mn) As wires, some other physics has to be additionally employed to fully explain the observed effects.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | ANISOTROPIC MAGNETORESISTANCE; ESAKI DIODE; FILMS; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Dieter Weiss |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 02 Dec 2020 09:52 |
| Last Modified: | 02 Dec 2020 09:52 |
| URI: | https://pred.uni-regensburg.de/id/eprint/32191 |
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