Cryogenic amplifier for fast real-time detection of single-electron tunneling

Vink, I. T. and Nooitgedagt, T. and Schouten, R. N. and Vandersypen, L. M. K. and Wegscheider, W. (2007) Cryogenic amplifier for fast real-time detection of single-electron tunneling. APPLIED PHYSICS LETTERS, 91 (12): 123512. ISSN 0003-6951,

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Abstract

The authors employ a cryogenic high electron mobility transistor (HEMT) amplifier to increase the bandwidth of a charge detection setup with a quantum point contact (QPC) charge sensor. The HEMT is operating at 1 K and the circuit has a bandwidth of 1 MHz. The noise contribution of the HEMT at high frequencies is only a few times higher than that of the QPC shot noise. The authors use this setup to monitor single-electron tunneling to and from an adjacent quantum dot. The authors measure fluctuations in the dot occupation as short as 400 ns, 20 times faster than in previous work. (c) 2007 American Institute of Physics.

Item Type: Article
Uncontrolled Keywords: QUANTUM-DOT;
Subjects: 500 Science > 530 Physics
Divisions: Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
Depositing User: Dr. Gernot Deinzer
Date Deposited: 01 Dec 2020 07:18
Last Modified: 01 Dec 2020 07:18
URI: https://pred.uni-regensburg.de/id/eprint/32204

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