Gaertner, A. and Prechtel, L. and Schuh, D. and Holleitner, A. W. and Kotthaus, J. P. (2007) Micropatterned electrostatic traps for indirect excitons in coupled GaAs quantum wells. PHYSICAL REVIEW B, 76 (8): 085304. ISSN 1098-0121,
Full text not available from this repository. (Request a copy)Abstract
We demonstrate an electrostatic trap for indirect excitons in a field-effect structure based on coupled GaAs quantum wells. Within the plane of a double quantum well, indirect excitons are trapped at the perimeter of a SiO(2) area sandwiched between the surface of the GaAs heterostructure and a semitransparent metallic top gate. The trapping mechanism is well explained by a combination of the quantum confined Stark effect and local field enhancement. We find the one-dimensional trapping potentials in the quantum well plane to be nearly harmonic with high spring constants exceeding 10 keV/cm(2).
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | ELECTRIC-FIELD; CONDENSATION; SEMICONDUCTOR; CONFINEMENT; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Dominique Bougeard |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 03 Dec 2020 12:09 |
| Last Modified: | 03 Dec 2020 12:09 |
| URI: | https://pred.uni-regensburg.de/id/eprint/32473 |
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