Wang, Shidong and Grifoni, Milena (2007) Schottky-barrier double-walled carbon-nanotube field-effect transistors. PHYSICAL REVIEW B, 76 (3): 033413. ISSN 1098-0121,
Full text not available from this repository.Abstract
We investigate electronic transport properties of Schottky-barrier field-effect transistors (FETs) based on double-walled carbon nanotubes (DWCNTs) with a semiconducting outer shell and a metallic inner one. This kind of DWCNT-FETs shows asymmetries of the I-V characteristics and threshold voltages due to the electron-hole asymmetry of the Schottky barrier. The presence of the metallic inner shell induces a large effective band gap, which is one order of magnitude larger than that due to the semiconducting shell alone of a single-walled carbon-nanotube FET.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | ROOM-TEMPERATURE; SINGLE; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Theroretical Physics > Chair Professor Grifoni > Group Milena Grifoni |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 03 Dec 2020 06:53 |
| Last Modified: | 03 Dec 2020 06:53 |
| URI: | https://pred.uni-regensburg.de/id/eprint/32577 |
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