Optical gain spectra for near UV to aquamarine (Al,In) GaN laser diodes

Kojima, K. and Schwarz, Ulrich T. and Funato, M. and Kawakami, Y. and Nagahama, S. and Mukai, T. (2007) Optical gain spectra for near UV to aquamarine (Al,In) GaN laser diodes. OPTICS EXPRESS, 15 (12). pp. 7730-7736. ISSN 1094-4087,

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Abstract

Optical gain spectra presented for ( Al, In)GaN laser diodes with lasing wavelength ranging from UV ( 375 nm) to aquamarine ( 470 nm) show a strong increase in inhomogeneous broadening, caused by Indium composition and quantum well width fluctuations which increase with Indium mole fraction. These gain spectra provides a standard data set for the calibration of microscopic many-body simulations. We demonstrate by comparison with basic simulations that the different assumptions of a global constant carrier density or of global constant quasi-Fermi levels for electrons and holes lead to a strikingly different dependency of optical gain on carrier density. For constant quasi-Fermi levels the threshold carrier density becomes insensitive to inhomogeneous broadening for realistic parameters. This is in agreement with the observation that the threshold current is nearly independent over the wavelength range from near UV to aquamarine. (c) 2007 Optical Society of America.

Item Type: Article
Uncontrolled Keywords: PLASMA;
Subjects: 500 Science > 530 Physics
Divisions: Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Ulrich Schwarz
Depositing User: Dr. Gernot Deinzer
Date Deposited: 04 Dec 2020 06:35
Last Modified: 11 Jan 2021 06:36
URI: https://pred.uni-regensburg.de/id/eprint/32617

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