Hole-density dependence of the cyclotron mass of 2D holes in a GaAs(001) quantum well

Khannanov, M. N. and Kukushkin, I. V. and Gubarev, S. I. and Smet, J. and von Klitzing, K. and Wegscheider, W. and Gerl, C. (2007) Hole-density dependence of the cyclotron mass of 2D holes in a GaAs(001) quantum well. JETP LETTERS, 85 (5). pp. 242-245. ISSN 0021-3640, 1090-6487

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Abstract

The dependence of the heavy-hole cyclotron mass in GaAs(001) quantum wells on the 2D-hole density has been measured by the optical detection method for resonance microwave by-absorption. A significant increase (almost doubling) has been observed in the cyclotron mass of heavy holes with an increase in the charge carrier density from 1.2 x 10(10) cm(-2) to 1.3 x 10(11) cm(-2).

Item Type: Article
Uncontrolled Keywords: ELECTRON-GAS; RESONANCE; SEMICONDUCTORS; GAAS;
Subjects: 500 Science > 530 Physics
Divisions: Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
Depositing User: Dr. Gernot Deinzer
Date Deposited: 04 Dec 2020 12:18
Last Modified: 04 Dec 2020 12:18
URI: https://pred.uni-regensburg.de/id/eprint/32826

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