Ertler, Christian and Fabian, Jaroslav (2006) Resonant tunneling magnetoresistance in coupled quantum wells. APPLIED PHYSICS LETTERS, 89 (24): 242101. ISSN 0003-6951,
Full text not available from this repository. (Request a copy)Abstract
A three barrier resonant tunneling structure in which the two quantum wells are formed by a magnetic semiconductor is theoretically investigated. Self-consistent numerical simulations of the structure predict giant magnetocurrent in the resonant bias regime as well as significant current spin polarization for a considerable range of applied biases. The requirements for large magnetocurrent are spin resolved resonance levels as well as asymmetry (spatial or magnetic) of the coupled quantum wells. (c) 2006 American Institute of Physics.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | SEMICONDUCTOR; HETEROSTRUCTURES; FERROMAGNETISM; SPINTRONICS; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Theroretical Physics > Chair Professor Richter > Group Jaroslav Fabian |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 15 Jan 2021 12:38 |
| Last Modified: | 15 Jan 2021 12:38 |
| URI: | https://pred.uni-regensburg.de/id/eprint/33658 |
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