Chen, Peifeng and Moser, Juergen and Kotissek, Philipp and Sadowski, Janusz and Zenger, Marcus and Weiss, Dieter and Wegscheider, Werner (2006) All electrical measurement of spin injection in a magnetic p-n junction diode. PHYSICAL REVIEW B, 74 (24): 241302. ISSN 2469-9950, 2469-9969
Full text not available from this repository.Abstract
Magnetic p-n junction diodes are fabricated to investigate spin-polarized electron transport. The injection of spin-polarized electrons in a semiconductor is achieved by driving electrons from a ferromagnetic injector (Fe), into a bulk semiconductor (n-GaAs) via Schottky contact. For detection, a diluted magnetic semiconductor (p-GaMnAs) layer is used. Clear magnetoresistance was observed only when a high forward bias was applied across the p-n junction.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | TUNNEL-JUNCTIONS; MAGNETORESISTANCE; SEMICONDUCTOR; SPINTRONICS; BARRIERS; FIELD; GAAS; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Dieter Weiss |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 18 Jan 2021 06:48 |
| Last Modified: | 18 Jan 2021 06:48 |
| URI: | https://pred.uni-regensburg.de/id/eprint/33725 |
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