Moser, J. and Zenger, M. and Gerl, C. and Schuh, Dieter and Meier, R. and Chen, P. and Bayreuther, G. and Wegscheider, Werner and Weiss, Dieter and Lai, C. -H. and Huang, R. -T. and Kosuth, M. and Ebert, H. (2006) Bias dependent inversion of tunneling magnetoresistance in Fe/GaAs/Fe tunnel junctions. APPLIED PHYSICS LETTERS, 89 (16): 162106. ISSN 0003-6951, 1077-3118
Full text not available from this repository. (Request a copy)Abstract
The authors investigated spin dependent transport through Fe/GaAs/Fe tunnel junctions. The tunneling magnetoresistance (TMR) effect was probed for different types of Fe/GaAs interfaces. For interfaces cleaned by hydrogen plasma the TMR effect is increased and is observable at room temperature. If an epitaxial Fe/GaAs (001) interface is involved, the tunnel junction exhibits a bias dependent inversion of the TMR effect. This is a first experimental signature for band structure effects at an Fe/GaAs interface and is relevant for spin injection experiments. (c) 2006 American Institute of Physics.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | ELECTRICAL SPIN INJECTION; TRANSPORT; GAAS; SEMICONDUCTOR; HYDROGEN; BARRIER; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Dieter Weiss |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 20 Jan 2021 09:41 |
| Last Modified: | 20 Jan 2021 09:41 |
| URI: | https://pred.uni-regensburg.de/id/eprint/33872 |
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