Gaertner, A. and Holleitner, Alexander W. and Kotthaus, J. P. and Schuh, Dieter (2006) Drift mobility of long-living excitons in coupled GaAs quantum wells. APPLIED PHYSICS LETTERS, 89 (5): 052108. ISSN 0003-6951,
Full text not available from this repository. (Request a copy)Abstract
The authors report on high-mobility transport of indirect excitons in coupled GaAs quantum wells. A voltage-tunable in-plane potential gradient is defined for excitons by exploiting the quantum confined Stark effect in combination with a lithographically designed resistive top gate. Excitonic photoluminescence resolved in space, energy, and time provides insight into the in-plane drift dynamics. Across several hundreds of microns an excitonic mobility of 10(5) cm(2)/eV s is observed for temperatures below 10 K. With increasing temperature the excitonic mobility decreases due to exciton-phonon scattering. (c) 2006 American Institute of Physics.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | 2-DIMENSIONAL EXCITONS; TRAPS; CONFINEMENT; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 09 Feb 2021 14:23 |
| Last Modified: | 09 Feb 2021 14:23 |
| URI: | https://pred.uni-regensburg.de/id/eprint/34283 |
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