Spin injection and detection in silicon

Zutic, Igor and Fabian, Jaroslav and Erwin, Steven C. (2006) Spin injection and detection in silicon. PHYSICAL REVIEW LETTERS, 97 (2): 026602. ISSN 0031-9007,

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Abstract

Spin injection and detection in silicon is a difficult problem, in part because the weak spin-orbit coupling and indirect gap preclude using standard optical techniques. Two ways to overcome this difficulty are proposed, both based on spin-polarized transport across a heterojunction. Using a realistic transport model incorporating the relevant spin dynamics of both electrons and holes, it is argued that symmetry properties of the charge current can be exploited to detect electrical spin injection in silicon using currently available techniques.

Item Type: Article
Uncontrolled Keywords: SEMICONDUCTORS; SI; HETEROSTRUCTURES; SPINTRONICS; TRANSPORT; JUNCTIONS; DEVICES; ALLOYS;
Subjects: 500 Science > 530 Physics
Divisions: Physics > Institute of Theroretical Physics > Chair Professor Richter > Group Jaroslav Fabian
Depositing User: Dr. Gernot Deinzer
Date Deposited: 10 Feb 2021 07:07
Last Modified: 10 Feb 2021 07:07
URI: https://pred.uni-regensburg.de/id/eprint/34304

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