Witzigmann, B. and Laino, V. and Luisier, A. and Schwarz, U. T. and Fischer, H. and Feicht, G. and Wegscheider, W. and Rumboz, C. and Lell, A. and Haerle, V. (2006) Analysis of temperature-dependent optical gain in GaN-InGaN quantum-well structures. IEEE PHOTONICS TECHNOLOGY LETTERS, 18 (13-16). pp. 1600-1602. ISSN 1041-1135, 1941-0174
Full text not available from this repository.Abstract
The temperature dependent spectral gain in InGaNGaN multiple quantum-well structures with 10% In content is investigated. Mode gain is measured in a temperature range between 239 K and 312 K using the Hakki-Paoli technique and compared to simulations. The simulation accounts for temperature-dependent polarization dephasing, and hence homogeneous broadening, in a rigorous fashion, without any fit parameter. It is found that the evolution of the gain spectrum with temperature at different drive currents can be modeled using a temperature-independent single value for inhomogeneous broadening. The resulting compositional fluctuations are compared to structural measurements.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | LASERS; SPECTRA; INDEX; InGaN-GaN laser diode (LD); inhomogeneous broadening; microscopic gain model; optical gain |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 11 Feb 2021 09:04 |
| Last Modified: | 11 Feb 2021 09:04 |
| URI: | https://pred.uni-regensburg.de/id/eprint/34354 |
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