Gareev, Rashid R. and Bugoslavsky, YV and Schreiber, R and Paul, A and Sperl, M and Doppe, M (2006) Carrier-induced ferromagnetism in Ge(Mn,Fe) magnetic semiconductor thin-film structures. APPLIED PHYSICS LETTERS, 88 (22): 222508. ISSN 0003-6951,
Full text not available from this repository. (Request a copy)Abstract
We report on the carrier-induced ferromagnetism in Ge(Mn,Fe) magnetic semiconductor insulating-type thin-film structures prepared using sequential deposition at T-g=520 K with subsequent annealing at T-g. In the resulting films Mn and Fe are diffused in the Ge matrix without compromising the epitaxial structure. The anomalous Hall effect serves as a manifestation of the carrier-induced magnetism, with p-type conductivity and the Curie temperature T-C=209 K. The additional doping with Fe stabilizes epitaxial growth and carrier-mediated magnetism at levels of magnetic doping exceeding 10%. We conclude that indirect ferromagnetic exchange is mediated by localized holes with concentration n similar to 10(20) cm(-3) and mobility mu similar to 10 cm(2)/(V s). (c) 2006 American Institute of Physics.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | ; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 15 Feb 2021 07:34 |
| Last Modified: | 15 Feb 2021 07:34 |
| URI: | https://pred.uni-regensburg.de/id/eprint/34530 |
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