Gareev, Rashid R. and Weides, M. and Schreiber, R. and Poppe, U. (2006) Resonant tunneling magnetoresistance in antiferromagnetically coupled Fe-based structures with multilayered Si/Ge spacers. APPLIED PHYSICS LETTERS, 88 (17): 172105. ISSN 0003-6951,
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We report on the experimental evidence of the tunneling magnetoresistance (TMR) effect near 3% and its inversion in strongly antiferromagnetically coupled Fe(001)/([Si(0.2 nm)/Ge(0.2 nm)](*)5)/Fe epitaxial structures with diffused interfaces. We explain the inversion of TMR with biasing voltage by resonant tunneling across impurity states with weak spin split Delta E similar to 10 meV and spin-dependent filtering in the spacer layer. The resonant tunneling is manifested in spin-dependent resonances close to zero biasing voltages related to antiferromagnetic coupling across impurity states. (c) 2006 American Institute of Physics.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | MAGNETIC-STRUCTURES; INTERLAYER; TRILAYERS; BARRIER; LAYERS; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 16 Feb 2021 05:54 |
| Last Modified: | 16 Feb 2021 05:54 |
| URI: | https://pred.uni-regensburg.de/id/eprint/34655 |
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