Schliemann, John (2006) Spin Hall effect. INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 20 (9). pp. 1015-1036. ISSN 0217-9792
Full text not available from this repository.Abstract
The intrinsic spin Hall effect in semiconductors has developed to a remarkably lively and rapidly growing branch of research in the field of semiconductor spintronics. In this article we give a pedagogical overview on both theoretical and experimental accomplishments and challenges. Emphasis is put on the the description of the intrinsic mechanisms of spin Hall transport in III-V zinc-blende semiconductors and on the effects of dissipation.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | 2-DIMENSIONAL ELECTRON GASES; QUANTUM-WELLS; FERROMAGNETIC SEMICONDUCTORS; ORBIT INTERACTION; BAND; HETEROSTRUCTURES; ORIENTATION; SPINTRONICS; SCATTERING; LAYERS; spin Hall effect; spin-orbit coupling; III-V semiconductors |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Theroretical Physics > Chair Professor Grifoni > Group John Schliemann |
| Depositing User: | Petra Gürster |
| Date Deposited: | 11 Feb 2021 17:02 |
| Last Modified: | 11 Feb 2021 17:02 |
| URI: | https://pred.uni-regensburg.de/id/eprint/34697 |
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