Microscopic analysis of optical gain in InGaN/GaN quantum wells

Witzigmann, Bernd and Laino, V. and Luisier, M. and Schwarz, Ulrich T. and Feicht, G. and Wegscheider, Werner and Engl, K. and Furitsch, M. and Leber, A. and Lell, A. and Harle, V. (2006) Microscopic analysis of optical gain in InGaN/GaN quantum wells. APPLIED PHYSICS LETTERS, 88 (2): 021104. ISSN 0003-6951, 1077-3118

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Abstract

A microscopic theory is used to analyze optical gain in InGaN/GaN quantum wells (QW). Experimental data are obtained from Hakki-Paoli measurements on edge-emitting lasers for different carrier densities. The simulations are based on the solution of the quantum kinetic Maxwell-Bloch equations, including many-body effects and a self-consistent treatment of piezoelectric fields. The results confirm the validity of a QW gain description for this material system with a substantial inhomogeneous broadening due to structural variation. They also give an estimate of the nonradiative recombination rate. (c) 2006 American Institute of Physics.

Item Type: Article
Uncontrolled Keywords: LASER GAIN; SPECTRA;
Subjects: 500 Science > 530 Physics
Divisions: Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Ulrich Schwarz
Depositing User: Dr. Gernot Deinzer
Date Deposited: 01 Mar 2021 05:57
Last Modified: 01 Mar 2021 05:57
URI: https://pred.uni-regensburg.de/id/eprint/35036

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