Sadowski, Janusz and Janik, E. and Lusakowska, E. and Domagala, J. Z. and Kret, S. and Dluzewski, P. and Adell, M. and Kanski, J. and Ilver, L. and Brucas, R. and Hanson, M. (2005) Self-organized MnAs quantum dots formed during annealing of GaMnAs under arsenic capping. APPLIED PHYSICS LETTERS, 87 (26): 263114. ISSN 0003-6951,
Full text not available from this repository. (Request a copy)Abstract
Formation of MnAs quantum dots in a regular ring-like distribution has been found on molecular beam epitaxy grown (GaMn)As(100) surfaces after low-temperature annealing under As capping. The appearance of the dots depends on the thickness and Mn concentration in the (GaMn)As layer. With 5 at. % substitutional Mn the quantum dots showed up for layers thicker than 100 nm. For thinner layers the surfaces of the annealed samples are smooth and well ordered with 1x2 surface reconstruction, just as for as-grown (GaMn)As. The annealed surfaces are Mn rich, and are well suited for continued epitaxial growth.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | CURIE-TEMPERATURE; GA1-XMNXAS; (GA,MN)AS; FILMS; GAAS; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 12 Apr 2021 09:34 |
| Last Modified: | 12 Apr 2021 09:34 |
| URI: | https://pred.uni-regensburg.de/id/eprint/35306 |
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