Demonstration of Rashba spin splitting in GaN-based heterostructures

Weber, W. and Ganichev, Sergey D. and Danilov, S. N. and Weiss, D. and Prettl, W. and Kvon, Z. D. and Bel'kov, V. V. and Golub, L. E. and Cho, H. I. and Lee, J. H. (2005) Demonstration of Rashba spin splitting in GaN-based heterostructures. APPLIED PHYSICS LETTERS, 87 (26): 262106. ISSN 0003-6951,

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Abstract

The circular photogalvanic effect, induced by infrared radiation, has been observed in (0001)-oriented n-GaN low dimensional structures. The photocurrent changes sign upon reversing the radiation helicity demonstrating the existence of spin splitting of the conduction band in k space in this type of materials. The observation suggests the presence of a sizeable Rashba type of spin splitting, caused by the built-in asymmetry at the AlGaN/GaN interface. (c) 2005 American Institute of Physics.

Item Type: Article
Uncontrolled Keywords: QUANTUM-WELLS; ELECTRON-GAS;
Subjects: 500 Science > 530 Physics
Divisions: Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev
Depositing User: Dr. Gernot Deinzer
Date Deposited: 12 Apr 2021 09:39
Last Modified: 12 Apr 2021 09:39
URI: https://pred.uni-regensburg.de/id/eprint/35307

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