Gmeinwieser, Nikolaus and Gottfriedsen, P. and Schwarz, Ulrich T. and Wegscheider, Werner and Clos, R. and Krtschil, A. and Krost, A. and Weimar, A. and Bruderl, G. and Lell, A. and Harle, V. (2005) Local strain and potential distribution induced by single dislocations in GaN. JOURNAL OF APPLIED PHYSICS, 98 (11): 116102. ISSN 0021-8979,
Full text not available from this repository. (Request a copy)Abstract
The presence of a threading edge dislocation terminated at the surface of GaN bulk substrates causes a dipole-like strain state ranging over a several micrometer square area. The local strain state is derived from microphotoluminescence mappings of the near-band-edge spectrum and is quantitatively reproduced by a three-dimensional elastic deformation model approach. These results are compared with the local electrical potential distortion due to the core charge and attracted defects as analyzed by scanning surface-potential microscopy. In contrast to the local strain, the potential profile does not show a dipole-like behavior and decreases laterally faster.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | HOMOEPITAXIAL GAN; SURFACE; LUMINESCENCE; CENTERS; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Ulrich Schwarz |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 14 Apr 2021 09:20 |
| Last Modified: | 14 Apr 2021 09:20 |
| URI: | https://pred.uni-regensburg.de/id/eprint/35368 |
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