Tse, Wang-Kong and Fabian, Jaroslav and Zutic, I. and Das Sarma, S. (2005) Spin accumulation in the extrinsic spin Hall effect. PHYSICAL REVIEW B, 72 (24): 241303. ISSN 2469-9950, 2469-9969
Full text not available from this repository.Abstract
The drift-diffusion formalism for spin-polarized carrier transport in semiconductors is generalized to include spin-orbit coupling. The theory is applied to treat the extrinsic spin Hall effect using realistic boundary conditions. It is shown that carrier and spin-diffusion lengths are modified by the presence of spin-orbit coupling and that spin accumulation due to the extrinsic spin Hall effect is strongly and qualitatively influenced by boundary conditions. Analytical formulas for the spin-dependent carrier recombination rates and inhomogeneous spin densities and currents are presented.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | SEMICONDUCTORS; |
| Divisions: | Physics > Institute of Theroretical Physics > Chair Professor Richter > Group Jaroslav Fabian |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 23 Apr 2021 04:38 |
| Last Modified: | 23 Apr 2021 04:38 |
| URI: | https://pred.uni-regensburg.de/id/eprint/35392 |
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