Mueller, T. and Lorke, A. and Do, Q. T. and Tegude, F. J. and Schuh, Dieter and Wegscheider, Werner (2005) A three-terminal planar selfgating device for nanoelectronic applications. SOLID-STATE ELECTRONICS, 49 (12). pp. 1990-1995. ISSN 0038-1101,
Full text not available from this repository. (Request a copy)Abstract
We report on a new nanoelectronic planar three-terminal device, fabricated from III/V semiconductor-based heterosystems. Utilizing the benefits of selfgating and in-plane gates, the tunable three-terminal device presented exhibits strong non-linear input- and transfer-characteristics, both, at liquid Helium and at room temperature. For a given side-gate voltage, the devices input characteristics closely resemble that of a conventional diode, although it is fabricated by a single post-growth patterning process only, i.e., etching of deep trenches. We present a simple model, based on an equivalent circuit, which well reproduces the experimental findings. Possible applications are discussed. (C) 2005 Elsevier Ltd. All rights reserved.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | Y-BRANCH SWITCH; NANOWIRE BUILDING-BLOCKS; FIELD-EFFECT TRANSISTOR; BALLISTIC JUNCTIONS; ROOM-TEMPERATURE; NONLINEAR OPERATION; COULOMB-BLOCKADE; BROKEN SYMMETRY; TRANSPORT; SINGLE; planar in-plane gate diode; selfgating; in-plane gates; nanoelectronics; device simulation |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 23 Apr 2021 04:49 |
| Last Modified: | 23 Apr 2021 04:49 |
| URI: | https://pred.uni-regensburg.de/id/eprint/35399 |
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