Murawski, J. and Schwarz, G. and Novak, V. and Prettl, Wilhelm and Schoell, E. (2005) Simulation of longitudinal instabilities in filamentary current flow during low-temperature impurity breakdown in semiconductors. ZAMM-ZEITSCHRIFT FUR ANGEWANDTE MATHEMATIK UND MECHANIK, 85 (11). pp. 823-835. ISSN 0044-2267, 1521-4001
Full text not available from this repository. (Request a copy)Abstract
Nonlinear semiconductor transport simulations based on the WIAS-TeSCA code are presented. Various regimes of low-temperature breakdown and current filamentation in n-GaAs are investigated using a drift-diffusion model with nonlinear generation-recombination kinetics, Nonlinear charge density waves are found in two-dimensional simulations of a point contact geometry with and without an additional perpendicular magnetic field. The numerical simulations of the nonlinear spatio-temporal dynamics are complemented by a linear stability analysis which reveals the possibility of undamped longitudinal fluctuations in the filamentary regime. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | N-TYPE GAAS; DIFFERENT CONTACT GEOMETRIES; IMPACT-IONIZATION; OSCILLATIONS; PATTERNS; PHOTOLUMINESCENCE; EQUATIONS; DYNAMICS; FIELDS; CHAOS; simulation; semiconductors; current filaments; instabilities |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Wilhelm Prettl |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 26 Apr 2021 05:03 |
| Last Modified: | 26 Apr 2021 05:03 |
| URI: | https://pred.uni-regensburg.de/id/eprint/35505 |
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