Topological defects in the edge-state structure in a bilayer electron system

Deviatov, E. V. and Dolgopolov, V. T. and Wurtz, A. and Lorke, A. and Wixforth, A. and Wegscheider, Werner and Campman, K. L. and Gossard, A. C. (2005) Topological defects in the edge-state structure in a bilayer electron system. PHYSICAL REVIEW B, 72 (4): 041305. ISSN 2469-9950, 2469-9969

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Abstract

We experimentally demonstrate formation of pointlike topological defects in the edge-state structure in the quantum Hall effect regime. By using of a selective population technique, we investigate equilibration processes between the edge states in bilayer electron structures with a high tunneling rate between layers. Unexpected flattening of the I-V curves in a perpendicular magnetic field at a specific filling factor combination and the recovery of the conventional nonlinear I-V characteristics in tilted fields give a strong evidence for the existence of topological defects.

Item Type: Article
Uncontrolled Keywords: QUANTUM HALL REGIME; MAGNETIC-FIELD; ELECTROSTATICS; CHANNELS;
Subjects: 500 Science > 530 Physics
Divisions: Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
Depositing User: Dr. Gernot Deinzer
Date Deposited: 07 May 2021 12:10
Last Modified: 07 May 2021 12:10
URI: https://pred.uni-regensburg.de/id/eprint/35964

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