Gerl, Christian and Schmult, S. and Tranitz, H. P. and Mitzkus, C. and Wegscheider, Werner (2005) Carbon-doped symmetric GaAs/AlGaAs quantum wells with hole mobilities beyond 10(6) cm(2)/V s. APPLIED PHYSICS LETTERS, 86 (25): 252105. ISSN 0003-6951,
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Utilizing a carbon filament doping source, we prepared two-dimensional hole gases in a symmetric quantum-well structure in the GaAs/AlGaAs heterosystem. Low-temperature hole mobilities up to 1.2x10(6) cm(2)/V s at a density of 2.3x10(11) cm(-2) were achieved on GaAs (001) substrates. In contrast to electron systems, the hole mobility sensitively depends on variations of the quantum-well width and the spacer thickness. In particular, an increase of the quantum-well width from an optimal value of 15 nm to 18 nm is accompanied by a 35% reduction of the hole mobility. The quality of ultrahigh-mobility electron systems is not affected by the employed carbon-doping source. (c) 2005 American Institute of Physics.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | MOLECULAR-BEAM EPITAXY; HIGH LANDAU-LEVELS; HETEROSTRUCTURES; TRANSPORT; GAAS; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 10 May 2021 08:05 |
| Last Modified: | 10 May 2021 08:05 |
| URI: | https://pred.uni-regensburg.de/id/eprint/35990 |
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