Schoedl, Thomas and Schwarz, Ulrich T. and Kuemmler, V. and Furitsch, M. and Leber, A. and Miler, A. and Lell, A. and Haerle, V. (2005) Facet degradation of GaN heterostructure laser diodes. JOURNAL OF APPLIED PHYSICS, 97 (12): 123102. ISSN 0021-8979, 1089-7550
Full text not available from this repository. (Request a copy)Abstract
We investigated the degradation of cleaved facets of (Al,In)GaN laser diodes in different atmospheres. We found that operation in water-free atmospheres with sufficient oxygen shows a slow degradation. Operation in atmospheres with water vapor causes a fast degradation and an oxidation on the facet. This deposition is a permanent damage to the laser diode. If the laser diode is operated in pure nitrogen, we find a thick deposition on the facet, which shows high absorption. This deposition can be removed by either high optical output powers or by operation in atmospheres with sufficient oxygen. We also explain the influence of these coatings to the degradation behavior and see these coatings as the reason for unstable kinks in the L-I characteristics during operation. (c) 2005 American Institute of Physics.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | QUANTUM-WELL LASERS; OXIDATION; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Ulrich Schwarz |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 10 May 2021 08:31 |
| Last Modified: | 10 May 2021 08:31 |
| URI: | https://pred.uni-regensburg.de/id/eprint/35997 |
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