Schmult, Stefan and Gerl, C. and Wurstbauer, U. and Mitzkus, C. and Wegscheider, Werner (2005) Carbon-doped high-mobility two-dimensional hole gases on (110) faced GaAs. APPLIED PHYSICS LETTERS, 86 (20): 202105. ISSN 0003-6951,
Full text not available from this repository. (Request a copy)Abstract
Carbon-doped high-mobility two-dimensional hole gases grown on (110) oriented GaAs substrates have been grown with hole mobilities exceeding 10(6) cm(2)/Vs in single heterojunction GaAs/AlGaAs structures. At these high mobilities, a pronounced mobility anisotropy has been observed. Rashba induced spin-splitting in these asymmetric structures has been found to be independent on the transport direction. (c) 2005 American Institute of Physics.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | QUANTUM-WELLS; HETEROSTRUCTURES; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 11 May 2021 13:15 |
| Last Modified: | 11 May 2021 13:15 |
| URI: | https://pred.uni-regensburg.de/id/eprint/36125 |
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