Near-field and far-field dynamics of (Al,ln)GaN laser diodes

Schwarz, Ulrich T. and Pindl, Markus and Wegscheider, Werner and Eichler, C. and Scholz, F. and Furitsch, M. and Leber, A. and Miller, S. and Lell, A. and Harle, V. (2005) Near-field and far-field dynamics of (Al,ln)GaN laser diodes. APPLIED PHYSICS LETTERS, 86 (16): 161112. ISSN 0003-6951,

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Abstract

Near- and far-field dynamics of edge-emitting (Al,In)GaN laser diodes are measured simultaneously with a 100 nm spatial and a 5 ns temporal resolution using a scanning near-field microscope. We reconstruct the phase distribution at the laser diode facet. Beam steering and near-field mode dynamics are interpreted in terms of thermal and carrier induced change of refractive index in the waveguide.© 2005 American Institute of Physics.

Item Type: Article
Uncontrolled Keywords: QUANTUM-WELL LASERS; OPTICAL GAIN; INGAN LASER; POWER;
Subjects: 500 Science > 530 Physics
Divisions: Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Ulrich Schwarz
Depositing User: Dr. Gernot Deinzer
Date Deposited: 17 May 2021 05:11
Last Modified: 17 May 2021 05:11
URI: https://pred.uni-regensburg.de/id/eprint/36251

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