Able, A and Wegscheider, W and Engl, K and Zweck, J (2005) Growth of crack-free GaN on Si(111) with graded AlGaN buffer layers. JOURNAL OF CRYSTAL GROWTH, 276 (3-4). pp. 415-418. ISSN 0022-0248,
Full text not available from this repository. (Request a copy)Abstract
Hexagonal GaN films on Si(111) substrates have been grown by metalorganic vapor phase epitaxy (MOVPE). High-temperature A1N buffers provided a reliable diffusion barrier to avoid meltback etching. By introducing a thick, graded A1GaN buffer layer, the critical thickness for cracking has been increased to at least 2 mu m. The films have been characterized by optical microscopy, transmission electron microscopy (TEM) and X-ray diffraction. (c) 2005 Elsevier B.V. All rights reserved.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | ALN; SAPPHIRE; SILICON; metalorganic vapor phase epitaxy; nitrides; semiconducting III-V materials |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 18 May 2021 07:28 |
| Last Modified: | 18 May 2021 07:28 |
| URI: | https://pred.uni-regensburg.de/id/eprint/36309 |
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