Kyarad, A. and Lengfellner, Hans (2004) Al-Si multilayers: A synthetic material with large thermoelectric anisotropy. APPLIED PHYSICS LETTERS, 85 (23). pp. 5613-5615. ISSN 0003-6951, 1077-3118
Full text not available from this repository. (Request a copy)Abstract
A synthetic material with large thermoelectric anisotropy has been prepared from a metal-semiconductor multilayer structure. By an alloying process, a multilayer stack A-B-A..., where A and B are pure aluminum and n-silicon, is produced with a thermoelectric anisotropy DeltaS=S-parallel to-S(perpendicular to)congruent to1.5 mV/K, where S-parallel to and S-perpendicular to are the absolute Seebeck coefficients along and perpendicular to the layers, respectively. The use of this synthetic material for light sensing applications is demonstrated. (C) 2004 American Institute of Physics.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | STATE YBA2CU3O7-DELTA FILMS; VOLTAGES; SILICON; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Hans Lengfellner |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 21 Jun 2021 08:34 |
| Last Modified: | 21 Jun 2021 08:34 |
| URI: | https://pred.uni-regensburg.de/id/eprint/36870 |
Actions (login required)
 |
View Item |
