Schwarz, Ulrich T. and Sturm, E. and Wegscheider, Werner and Kuemmler, V. and Lell, A. and Haerle, V. (2004) Excitonic signature in gain and carrier induced change of refractive index spectra of (In,Al)GaN quantum well lasers. APPLIED PHYSICS LETTERS, 85 (9). pp. 1475-1477. ISSN 0003-6951,
Full text not available from this repository. (Request a copy)Abstract
The exciton is observed in (In,Al)GaN laser diodes as resonance in the optical gain spectra and in the spectra of the carrier induced change of the refractive index. The observed instability of the exciton with respect to the free electron-hole plasma with increasing carrier densities is accompanied by a blueshift of the exciton resonance due to the quantum confined Stark shift. The experiments confirm central points of many-body simulations of InGaN/GaN quantum wells. The exciton becomes unstable near threshold and so lasing occurs from the electron-hole plasma. (C) 2004 American Institute of Physics.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | PIEZOELECTRIC FIELDS; OPTICAL GAIN; DIODES; DEGRADATION; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Ulrich Schwarz |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 02 Jul 2021 04:52 |
| Last Modified: | 02 Jul 2021 04:52 |
| URI: | https://pred.uni-regensburg.de/id/eprint/37317 |
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