Wagenhuber, Klaus and Tranitz, Hans-Peter and Reinwald, Matthias and Wegscheider, Werner (2004) Influence of manganese contamination on high-mobility GaAs/AlGaAs heterostructures. APPLIED PHYSICS LETTERS, 85 (7). pp. 1190-1192. ISSN 0003-6951,
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Photoluminescence and magnetotransport measurements have been performed to assess the quality of modulation-doped GaAs/AlGaAs heterostructures. The temporal evolution of the low-temperature electron mobility of samples prepared in a molecular-beam-epitaxy chamber containing manganese as a source material was studied. Mn contamination was identified to be responsible for the reduction of the electron mobility to 1x10(6) cm(2)/V s and the appearance of a distinct photoluminescence band. In contrast, structures in which this signal is absent reach mobility values of 5.4x10(6) cm(2)/V s. This directly proves that the epitaxy of high-mobility electron systems and structures containing GaMnAs layers, in principle, can be combined in one growth chamber. (C) 2004 American Institute of Physics.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | 2-DIMENSIONAL ELECTRON-GAS; GAAS; SEMICONDUCTORS; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 02 Jul 2021 08:50 |
| Last Modified: | 02 Jul 2021 08:50 |
| URI: | https://pred.uni-regensburg.de/id/eprint/37328 |
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