Zenger, M. and Moser, J. and Wegscheider, Werner and Weiss, Dieter and Dietlein, T. (2004) High-field magnetoresistance of Fe/GaAs/Fe tunnel junctions. JOURNAL OF APPLIED PHYSICS, 96 (4). pp. 2400-2402. ISSN 0021-8979, 1089-7550
Full text not available from this repository.Abstract
We investigate transport through 6-10 nm thin epitaxial GaAs(001) barriers sandwiched between polycrystalline iron films. Apart from a pronounced tunneling magnetoresistance effect at low magnetic fields, we observe a distinct negative magnetoresistance (MR) at low and a positive MR at higher temperatures. We show that the negative MR contribution is only observed for the ferromagnetic iron contacts but is absent if iron is replaced by copper or gold electrodes. Possible explanations of the negative MR involve suppression of spin-flip scattering or Zeeman splitting of the tunneling barrier, but neither of these explanations is fully consistent with the data. (C) 2004 American Institute of Physics.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | CRYSTAL GAAS(001) BARRIERS; SPIN INJECTION; SEMICONDUCTOR; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Dieter Weiss |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 05 Jul 2021 08:22 |
| Last Modified: | 05 Jul 2021 08:22 |
| URI: | https://pred.uni-regensburg.de/id/eprint/37335 |
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